skm400ga12v ? by semikron rev. 4 C 15.08.2012 1 semitrans ? 4 ga skm400ga12vfeatures v-igbt = 6. generation trench v-igbt (fuji) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct copper bonding) ul recognized, file no. e63532 increased power cycling capability with integrated gate resistor low switching losses at high di/dt typical applications* ac inverter drives ups electronic welders switched reluctance motor remarks case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150 absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 175 c t c =25c 612 a t c =80c 467 a i cnom 400 a i crm i crm = 3xi cnom 1200 a v ges -20 ... 20 v t psc v cc = 720 v v ge 15 v v ces 1200 v t j =125c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 440 a t c =80c 329 a i fnom 400 a i frm i frm = 3xi fnom 1200 a i fsm t p = 10 ms, sin 180, t j =25c 1980 a t j -40 ... 175 c module i t(rms) t terminal =80c 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =400a v ge =15v chiplevel t j =25c 1.75 2.20 v t j =150c 2.20 2.50 v v ce0 chiplevel t j =25c 0.94 1.04 v t j =150c 0.88 0.98 v r ce v ge =15v chiplevel t j =25c 2.02 2.90 m ? t j =150c 3.30 3.80 m ? v ge(th) v ge =v ce , i c = 16 ma 5.5 6 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 24.04 nf c oes f=1mhz 2.36 nf c res f=1mhz 2.356 nf q g v ge = - 8 v...+ 15 v 4420 nc r gint 1.88 ? t d(on) v cc = 600 v i c =400a v ge =15v r g on =3 ? r g off =3 ? di/dt on = 9800 a/s di/dt off =5000a/s du/dt off = 7600 v/ s t j =150c 350 ns t r t j =150c 60 ns e on t j =150c 39 mj t d(off) t j =150c 700 ns t f t j =150c 65 ns e off t j =150c 42 mj r th(j-c) per igbt 0.072 k/w
skm400ga12v 2 rev. 4 C 15.08.2012 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 400 a v ge =0v chiplevel t j =25c 2.20 2.52 v t j =150c 2.15 2.47 v v f0 chiplevel t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f chiplevel t j =25c 2.3 2.5 m ? t j =150c 3.1 3.4 m ? i rrm i f = 400 a di/dt off =9500a/s v ge =15v v cc = 600 v t j =150c 450 a q rr t j =150c 58 c e rr t j =150c 26 mj r th(j-c) per diode 0.14 k/w module l ce 15 20 nh r cc'+ee' terminal-chip t c =25c 0.18 m ? t c =125c 0.22 m ? r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm m4 1.1 2 nm w 330 g semitrans ? 4 ga skm400ga12vfeatures v-igbt = 6. generation trench v-igbt (fuji) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct copper bonding) ul recognized, file no. e63532 increased power cycling capability with integrated gate resistor low switching losses at high di/dt typical applications* ac inverter drives ups electronic welders switched reluctance motor remarks case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150
skm400ga12v ? by semikron rev. 4 C 15.08.2012 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skm400ga12v 4 rev. 4 C 15.08.2012 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
skm400ga12v ? by semikron rev. 4 C 15.08.2012 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 4 ga
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